Eiji higurashi surface activated bonding
WebFeb 18, 2024 · A modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO 2 layers, which is sufficient to withstand the wafer thinning to a LN thickness of approximately 5 μm using conventional mechanical polishing. WebEiji HOASHI Cited by 325 of Osaka University, Osaka (Handai) Read 43 publications Contact Eiji HOASHI
Eiji higurashi surface activated bonding
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WebA modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO2 layers, ... Ryo Takigawa, Toru Tomimatsu, Eiji Higurashi, Tanemasa Asano. "Residual Stress in Lithium Niobate Film Layer of LNOI/Si Hybrid … WebRyo Takigawa, Eiji Higurashi, Tanemasa Asano. "Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method." Japanese Journal of Applied Physics 57.6S1 (2024) 06HJ12
WebEiji Higurashi Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film... WebRoom-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method Eiji HIGURASHI†a), Member, Ken OKUMURA†, Yutaka KUNIMUNE †, Tadatomo SUGA , and Kei HAGIWARA††, Nonmembers SUMMARY WaferswithsmoothAuthinfilms(rmssurfaceroughness: <0.5nm, thickness: <50nm) were …
WebOct 25, 2024 · Eiji Higurashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already … WebJun 26, 2009 · Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10~15 μm) with smooth surfaces (Ra <; 3.5 nm) was demonstrated for optical microsensor applications. Bonding of… Expand 1 Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices E. Higurashi …
WebEiji Higurashi, Yuta Sasaki, Ryuji Kurayama, Tadatomo Suga, Yasuo Doi, Yoshihiro Sawayama, Iwao Hosako. ... This paper reports the mechanical and electrical …
WebEiji Higurashi. Tohoku University. Verified email at tohoku.ac.jp ... Au–Au surface-activated bonding and its application to optical microsensors with 3-D structure. E … breast screening toolWebMay 20, 2015 · Eiji Higurashi; Tadatomo Suga; Tetsuya Kawanishi; A lithium niobate (LiNbO 3 )/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO 3 chips with gold (Au ... costume arrow hommeWebJan 25, 2024 · Low-temperature bonding of wafers has been studied utilizing reactive ion etching-mode plasma activation. The hydrophilic Si and thermally oxidized Si wafers were exposed to N 2 , Ar, or O 2 plasma… Expand 265 Pulsed laser deposition of hexagonal GaN-on-Si (100) template for MOCVD applications. K. Shen, Ming-Chien Jiang, +4 … costume atheistWebMar 1, 2016 · Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact... breast screening torbayWebRoom-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method Eiji HIGURASHI†a), Member, Ken OKUMURA†, … breast screening testWebApr 1, 2024 · Room-temperature pressureless wafer-scale hermetic sealing in air and vacuum using surface activated bonding with ultrathin Au films. Contributors : … costume archangel wingsWebJan 22, 2015 · Surface-activated bonding (SAB) is a promising alternative approach to the conventional bonding methods. SAB is a room temperature bonding method and has … costume aura of pink